Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar V-NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilising a smaller footprint.
Optimise computing with TurboWrite technology for unrivalled read / write speedsAchieve ultimate read / write performance to maximise your everyday computing experience with Samsung's TurboWrite technology. Compared to the 840 EVO, the 850 EVO shows an increased overall user experience of approximately 13%, partly thanks to the now 2x faster random write speeds. The 850 EVO delivers top-notch performance in its class, with sequential read and write speeds of 540 MB/s and 520 MB/s, respectively. Enjoy optimised random performance in all Queue Depths (QD) for client PC usage scenarios.
Flexible form factor for use in different types of devicesThe versatile 850 EVO has you covered no matter which connector type or physical slot size your device supports. The 850 EVO M.2 SATA shares a similar slim and narrow footprint like M.2 PCIe type SSDs, but supports the SATA interface. It’s perfect for faster computing experiences on today’s desktops, laptops, and especially ultra-thin space-constrained tablet PCs.
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